Parametric results for: MGFC40V7177 under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

HIGH RELIABILITY 5 HIGH RELIABILITY, HIGH EFFICIENCY 1

9 hits Apply

SOURCE 9

9 hits Apply

Configuration (1)

SINGLE 9

9 hits Apply

DS Breakdown Voltage-Min (1)

10 V 2

9 hits Apply

Drain Current-Max (ID) (2)

2.4 A 1 6 A 8

Min (A) - Max (A)

9 hits Apply

JUNCTION 9

9 hits Apply

Highest Frequency Band (1)

C BAND 9

9 hits Apply

R-CDFM-F2 8 R-XDFM-F2 1

9 hits Apply

Manufacturer (1)

Mitsubishi Electric 9

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (1)

2 9

9 hits Apply

DEPLETION MODE 9

9 hits Apply

175.0 °C 5

9 hits Apply

CERAMIC, METAL-SEALED COFIRED 8 UNSPECIFIED 1

9 hits Apply

RECTANGULAR 9

9 hits Apply

FLANGE MOUNT 9

9 hits Apply

Obsolete 9

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

42.8 W 2 43 W 1 53.5 W 2

Min (W) - Max (W)

9 hits Apply

Power Gain-Min (Gp) (1)

7.0 dB 3

9 hits Apply

Surface Mount (1)

YES 9

9 hits Apply