Parametric results for: MGFC40V7177B under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

HIGH RELIABILITY 2 HIGH RELIABILITY, HIGH EFFICIENCY 1

3 hits Apply

SOURCE 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

Drain Current-Max (ID) (1)

6 A 3

3 hits Apply

JUNCTION 3

3 hits Apply

Highest Frequency Band (1)

C BAND 3

3 hits Apply

R-CDFM-F2 2 R-XDFM-F2 1

3 hits Apply

Manufacturer (1)

Mitsubishi Electric 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 3

3 hits Apply

DEPLETION MODE 3

3 hits Apply

175.0 °C 1

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 2 UNSPECIFIED 1

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Obsolete 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

53.5 W 1

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply