Parametric results for: MGFX35V0005-51 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

SOURCE 1

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Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 1

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Drain Current-Max (ID) (1)

2.8 A 1

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JUNCTION 1

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Highest Frequency Band (1)

X BAND 1

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R-CDFM-F2 1

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Manufacturer (1)

Mitsubishi Electric 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

2 1

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DEPLETION MODE 1

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175.0 °C 1

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CERAMIC, METAL-SEALED COFIRED 1

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RECTANGULAR 1

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FLANGE MOUNT 1

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Obsolete 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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Power Gain-Min (Gp) (1)

7.5 dB 1

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Surface Mount (1)

YES 1

1 hit Apply