Parametric results for: MGSF1P02ELT1 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

Single 1 SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

20 V 3

4 hits Apply

Drain Current-Max (Abs) (ID) (1)

750 mA 1

4 hits Apply

Drain Current-Max (ID) (1)

750 mA 3

4 hits Apply

Drain-source On Resistance-Max (1)

260 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-236 1 TO-236AB 2

4 hits Apply

R-PDSO-G3 3

4 hits Apply

e0 3

4 hits Apply

Manufacturer (4)

Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 onsemi 1

4 hits Apply

1 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

3 3

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Obsolete 2 Transferred 2

4 hits Apply

235 1

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 4

4 hits Apply

400 mW 4

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply