Parametric results for: MMBT5401-AE3-R under Other Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

600 mA 4

5 hits Apply

Collector-Emitter Voltage-Max (1)

150 V 3

5 hits Apply

Configuration (1)

SINGLE 4

5 hits Apply

DC Current Gain-Min (hFE) (2)

50.0 2 80.0 2

Min - Max

5 hits Apply

R-PDSO-G3 3

5 hits Apply

e0 1

5 hits Apply

Manufacturer (2)

PanJit Semiconductor 2 Unisonic Technologies Co Ltd 3

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

3 3

5 hits Apply

150.0 °C 3

5 hits Apply

-55.0 °C 2

5 hits Apply

PLASTIC/EPOXY 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

SMALL OUTLINE 3

5 hits Apply

Active 5

5 hits Apply

NOT SPECIFIED 2

5 hits Apply

Polarity/Channel Type (1)

PNP 4

5 hits Apply

350 mW 1

5 hits Apply

Surface Mount (1)

YES 4

5 hits Apply

Transition Frequency-Nom (fT) (2)

100 MHz 3 300 MHz 1

Min (MHz) - Max (MHz)

5 hits Apply