Parametric results for: MMBT5551T under Small Signal Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

600 mA 3

3 hits Apply

6 pF 1

3 hits Apply

Collector-Emitter Voltage-Max (1)

160 V 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DC Current Gain-Min (hFE) (3)

30.0 1 50.0 1 100.0 1

Min - Max

3 hits Apply

R-PDSO-G3 3

3 hits Apply

e3 2

3 hits Apply

Manufacturer (2)

Micro Commercial Components 2 Samsung Semiconductor 1

3 hits Apply

1 2

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Active 2 Obsolete 1

3 hits Apply

Yes 1

3 hits Apply

260 2

3 hits Apply

Polarity/Channel Type (1)

NPN 3

3 hits Apply

300 mW 2

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply

Transition Frequency-Nom (fT) (1)

100 MHz 3

3 hits Apply