Parametric results for: MMDF1N05ER2 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE ENERGY RATED; LOGIC LEVEL COMPATIBLE 2 LOGIC LEVEL COMPATIBLE 2

5 hits Apply

300.0 mJ 4

5 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

50 V 4

5 hits Apply

Drain Current-Max (Abs) (ID) (1)

2 A 1

5 hits Apply

Drain Current-Max (ID) (1)

2 A 4

5 hits Apply

Drain-source On Resistance-Max (2)

300 mΩ 2 500 mΩ 2

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PDSO-G8 4

5 hits Apply

e0 3 e3 1

5 hits Apply

Manufacturer (4)

Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 onsemi 2

5 hits Apply

1 2

5 hits Apply

Number of Elements (1)

2 4

5 hits Apply

Number of Terminals (1)

8 4

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 5

5 hits Apply

-55.0 °C 1

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

SMALL OUTLINE 4

5 hits Apply

Obsolete 3 Transferred 2

5 hits Apply

No 1 Yes 1

5 hits Apply

235 1 260 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

2 W 5

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply