Parametric results for: MMSF3205 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 2

3 hits Apply

600.0 mJ 2

3 hits Apply

Configuration (2)

Single 1 SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

20 V 2

3 hits Apply

Drain Current-Max (Abs) (ID) (1)

11 A 1

3 hits Apply

Drain Current-Max (ID) (1)

8.6 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

15 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PDSO-G8 2

3 hits Apply

e0 2

3 hits Apply

Manufacturer (3)

Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

8 2

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

SMALL OUTLINE 2

3 hits Apply

Obsolete 3

3 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

3 hits Apply

1.56 W 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply