Parametric results for: MRF5003 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

SOURCE 1

7 hits Apply

Configuration (2)

SINGLE 5 Single 2

7 hits Apply

DS Breakdown Voltage-Min (1)

36 V 5

7 hits Apply

Drain Current-Max (Abs) (ID) (1)

1.7 A 2

7 hits Apply

Drain Current-Max (ID) (2)

1.7 A 4 8 A 1

Min (A) - Max (A)

7 hits Apply

Drain-source On Resistance-Max (1)

750 mΩ 2

7 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

7 hits Apply

5.4 pF 4

7 hits Apply

Highest Frequency Band (2)

ULTRA HIGH FREQUENCY BAND 4 VERY HIGH FREQUENCY BAND 1

7 hits Apply

R-CXMW-N3 4 R-PDSO-G8 1

7 hits Apply

Manufacturer (4)

Advanced Semiconductor Inc 1 Freescale Semiconductor 2 Motorola Mobility LLC 2 Motorola Semiconductor Products 2

7 hits Apply

Number of Elements (1)

1 5

7 hits Apply

Number of Terminals (2)

3 4 8 1

7 hits Apply

ENHANCEMENT MODE 7

7 hits Apply

150.0 °C 1 200.0 °C 6

Min (°C) - Max (°C)

7 hits Apply

CERAMIC, METAL-SEALED COFIRED 4 PLASTIC/EPOXY 1

7 hits Apply

RECTANGULAR 5

7 hits Apply

MICROWAVE 4 SMALL OUTLINE 1

7 hits Apply

Active 1 Obsolete 6

7 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 7

7 hits Apply

12.5 W 4

7 hits Apply

12.5 W 6 60 W 1

Min (W) - Max (W)

7 hits Apply

Power Gain-Min (Gp) (1)

9.5 dB 4

7 hits Apply

Surface Mount (1)

YES 5

7 hits Apply