Parametric results for: MRF587 under RF Power Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Gain-Min (Gp) Surface Mount Transition Frequency-Nom (fT)

LOW NOISE 4

5 hits Apply

ISOLATED 2

5 hits Apply

Collector Current-Max (IC) (1)

200 mA 5

5 hits Apply

2.2 pF 5

5 hits Apply

Collector-Emitter Voltage-Max (1)

17 V 5

5 hits Apply

Configuration (1)

SINGLE 5

5 hits Apply

DC Current Gain-Min (hFE) (1)

50.0 4

5 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 5

5 hits Apply

O-CRPM-F4 4 O-XRPM-F4 1

5 hits Apply

Manufacturer (5)

Advanced Semiconductor Inc 1 MACOM 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 TE Connectivity 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

4 5

5 hits Apply

200.0 °C 4

5 hits Apply

-65.0 °C 1

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 4 UNSPECIFIED 1

5 hits Apply

ROUND 5

5 hits Apply

POST/STUD MOUNT 5

5 hits Apply

Active 2 Transferred 3

5 hits Apply

Polarity/Channel Type (1)

NPN 5

5 hits Apply

Power Gain-Min (Gp) (1)

11.0 dB 3

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply

Transition Frequency-Nom (fT) (1)

5.5 GHz 4

5 hits Apply