Parametric results for: MRF5S9100MBR1 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

SOURCE 3

4 hits Apply

Configuration (1)

SINGLE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

68 V 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 3

4 hits Apply

TO-272 3

4 hits Apply

R-PDFM-F4 3

4 hits Apply

e0 2

4 hits Apply

Manufacturer (4)

Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 NXP Semiconductors 1

4 hits Apply

1 2 3 2

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

4 3

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

200.0 °C 3

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

FLANGE MOUNT 3

4 hits Apply

Obsolete 3 Transferred 1

4 hits Apply

260 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

336 W 3

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply