Parametric results for: MRF6S21060NBR1 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

SOURCE 1

2 hits Apply

Configuration (1)

SINGLE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

68 V 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

2 hits Apply

Highest Frequency Band (1)

S BAND 1

2 hits Apply

TO-272 1

2 hits Apply

R-PDFM-F4 1

2 hits Apply

e3 1

2 hits Apply

Manufacturer (2)

Freescale Semiconductor 1 NXP Semiconductors 1

2 hits Apply

3 1

2 hits Apply

Number of Elements (1)

1 1

2 hits Apply

Number of Terminals (1)

4 1

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

FLANGE MOUNT 1

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

260 1 NOT SPECIFIED 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

2 hits Apply

197 W 1

2 hits Apply

Surface Mount (1)

YES 1

2 hits Apply