Parametric results for: MRF8P20161HSR3 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 3

3 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 3

3 hits Apply

DS Breakdown Voltage-Min (1)

65 V 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

Highest Frequency Band (1)

S BAND 3

3 hits Apply

R-CDFP-F4 3

3 hits Apply

Manufacturer (3)

Freescale Semiconductor 1 NXP Semiconductors 1 Rochester Electronics LLC 1

3 hits Apply

NOT APPLICABLE 1

3 hits Apply

Number of Elements (1)

2 3

3 hits Apply

Number of Terminals (1)

4 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

225.0 °C 2

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLATPACK 3

3 hits Apply

Active 1 Obsolete 1 Transferred 1

3 hits Apply

Yes 2

3 hits Apply

260 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply