Parametric results for: MRFE6VP61K25HR5 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band Manufacturer Number of Elements Operating Mode Operating Temperature-Max Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs)

SOURCE 1

2 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS 1

2 hits Apply

DS Breakdown Voltage-Min (1)

125 V 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

2 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

2 hits Apply

Manufacturer (2)

Freescale Semiconductor 1 NXP Semiconductors 1

2 hits Apply

Number of Elements (1)

2 1

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

225.0 °C 1

2 hits Apply

Not Recommended 1 Transferred 1

2 hits Apply

Yes 1

2 hits Apply

260 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

2 hits Apply

1.3 kW 1

2 hits Apply