Parametric results for: MT3S111TU,LF under RF Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Transition Frequency-Nom (fT)

LOW NOISE 3

3 hits Apply

Collector Current-Max (IC) (1)

100 mA 3

3 hits Apply

1.45 pF 3

3 hits Apply

Collector-Emitter Voltage-Max (1)

6 V 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DC Current Gain-Min (hFE) (1)

200.0 3

3 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 3

3 hits Apply

R-PDSO-F3 3

3 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Not Recommended 3

3 hits Apply

NOT SPECIFIED 2

3 hits Apply

Polarity/Channel Type (1)

NPN 3

3 hits Apply

800 mW 3

3 hits Apply

Power Gain-Min (Gp) (1)

10.5 dB 2

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply

Transition Frequency-Nom (fT) (1)

10 GHz 3

3 hits Apply