Parametric results for: MT4S102T under RF Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

LOW NOISE 3

3 hits Apply

Collector Current-Max (IC) (1)

20 mA 3

3 hits Apply

0.6 pF 2 0.8 pF 1

Min (pF) - Max (pF)

3 hits Apply

Collector-Emitter Voltage-Max (1)

3 V 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DC Current Gain-Min (hFE) (1)

200.0 1

3 hits Apply

Highest Frequency Band (1)

KA BAND 3

3 hits Apply

R-PDSO-F4 3

3 hits Apply

e0 1

3 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

4 3

3 hits Apply

150.0 °C 1

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

End Of Life 1 Obsolete 2

3 hits Apply

Polarity/Channel Type (1)

NPN 3

3 hits Apply

60 mW 1

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply

Transition Frequency-Nom (fT) (1)

25 GHz 3

3 hits Apply