Parametric results for: MTD1N50E under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2

13 hits Apply

45.0 mJ 7

13 hits Apply

DRAIN 9

13 hits Apply

Configuration (3)

SINGLE 6 Single 2 SINGLE WITH BUILT-IN DIODE 5

13 hits Apply

DS Breakdown Voltage-Min (1)

500 V 9

13 hits Apply

Drain Current-Max (Abs) (ID) (1)

1 A 2

13 hits Apply

Drain Current-Max (ID) (1)

1 A 11

13 hits Apply

Drain-source On Resistance-Max (1)

5 Ω 9

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

13 hits Apply

R-PSSO-G2 9

13 hits Apply

e0 9

13 hits Apply

Manufacturer (4)

Freescale Semiconductor 3 Motorola Mobility LLC 3 Motorola Semiconductor Products 3 onsemi 4

13 hits Apply

Number of Elements (1)

1 11

13 hits Apply

Number of Terminals (1)

2 9

13 hits Apply

ENHANCEMENT MODE 13

13 hits Apply

150.0 °C 11

13 hits Apply

PLASTIC/EPOXY 9

13 hits Apply

RECTANGULAR 9

13 hits Apply

SMALL OUTLINE 9

13 hits Apply

Obsolete 9 Transferred 4

13 hits Apply

NOT SPECIFIED 1

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 13

13 hits Apply

40 W 11

13 hits Apply

Surface Mount (1)

YES 13

13 hits Apply