Parametric results for: MTD3055V-1 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

72.0 mJ 5

6 hits Apply

DRAIN 5

6 hits Apply

Configuration (2)

Single 1 SINGLE WITH BUILT-IN DIODE 5

6 hits Apply

DS Breakdown Voltage-Min (1)

60 V 5

6 hits Apply

Drain Current-Max (Abs) (ID) (1)

12 A 1

6 hits Apply

Drain Current-Max (ID) (1)

12 A 5

6 hits Apply

Drain-source On Resistance-Max (1)

150 mΩ 5

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PSIP-T3 1 R-PSSO-G2 4

6 hits Apply

e0 4

6 hits Apply

Manufacturer (4)

Freescale Semiconductor 1 Motorola Mobility LLC 2 Motorola Semiconductor Products 1 onsemi 2

6 hits Apply

1 1

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (2)

2 4 3 1

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

175.0 °C 4

6 hits Apply

PLASTIC/EPOXY 5

6 hits Apply

RECTANGULAR 5

6 hits Apply

IN-LINE 1 SMALL OUTLINE 4

6 hits Apply

Obsolete 4 Transferred 2

6 hits Apply

NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

48 W 4

6 hits Apply

Surface Mount (2)

NO 1 YES 5

6 hits Apply