Parametric results for: MTM10N06E under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (2)

Single 1 SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

60 V 2

3 hits Apply

Drain Current-Max (Abs) (ID) (1)

10 A 1

3 hits Apply

Drain Current-Max (ID) (1)

10 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

200 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

100 pF 2

3 hits Apply

TO-204AA 2

3 hits Apply

O-MBFM-P2 2

3 hits Apply

e0 2

3 hits Apply

Manufacturer (3)

Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

2 2

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

METAL 2

3 hits Apply

ROUND 2

3 hits Apply

FLANGE MOUNT 2

3 hits Apply

Obsolete 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

75 W 2

3 hits Apply

75 W 3

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply