Parametric results for: MTP2N60 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LEADFORM OPTIONS ARE AVAILABLE 2

42 hits Apply

190.0 mJ 3

42 hits Apply

DRAIN 37

42 hits Apply

Configuration (3)

SINGLE 34 Single 2 SINGLE WITH BUILT-IN DIODE 5

42 hits Apply

DS Breakdown Voltage-Min (1)

600 V 38

42 hits Apply

Drain Current-Max (Abs) (ID) (1)

2 A 2

42 hits Apply

Drain Current-Max (ID) (1)

2 A 38

42 hits Apply

Drain-source On Resistance-Max (2)

3.8 Ω 35 6 Ω 2

Min (Ω) - Max (Ω)

42 hits Apply

METAL-OXIDE SEMICONDUCTOR 41

42 hits Apply

40 pF 2

42 hits Apply

TO-220AB 37

42 hits Apply

R-PSFM-T3 37

42 hits Apply

e0 5

42 hits Apply

Manufacturer (6)

Freescale Semiconductor 2 Motorola Mobility LLC 18 Motorola Semiconductor Products 18 New Jersey Semiconductor Products Inc 1 onsemi 1 Semiconductor Technology Inc 2

42 hits Apply

Number of Elements (1)

1 39

42 hits Apply

Number of Terminals (1)

3 37

42 hits Apply

ENHANCEMENT MODE 40

42 hits Apply

150.0 °C 8

42 hits Apply

PLASTIC/EPOXY 37

42 hits Apply

RECTANGULAR 37

42 hits Apply

FLANGE MOUNT 37

42 hits Apply

Active 1 Contact Manufacturer 2 Obsolete 37 Transferred 2

42 hits Apply

235 1

42 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 41

42 hits Apply

50 W 32 75 W 2

Min (W) - Max (W)

42 hits Apply

50 W 4 75 W 4

Min (W) - Max (W)

42 hits Apply

Surface Mount (1)

NO 40

42 hits Apply