Parametric results for: MTP4N80E under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 3

38 hits Apply

320.0 mJ 3

38 hits Apply

DRAIN 35

38 hits Apply

Configuration (3)

SINGLE 34 Single 1 SINGLE WITH BUILT-IN DIODE 3

38 hits Apply

DS Breakdown Voltage-Min (1)

800 V 37

38 hits Apply

Drain Current-Max (Abs) (ID) (1)

4 A 1

38 hits Apply

Drain Current-Max (ID) (1)

4 A 37

38 hits Apply

Drain-source On Resistance-Max (1)

3 Ω 36

38 hits Apply

METAL-OXIDE SEMICONDUCTOR 38

38 hits Apply

TO-220AB 36

38 hits Apply

R-PSFM-T3 36

38 hits Apply

e0 3

38 hits Apply

Manufacturer (6)

Freescale Semiconductor 1 Motorola Mobility LLC 17 Motorola Semiconductor Products 17 New Jersey Semiconductor Products Inc 1 onsemi 1 Semiconductor Technology Inc 1

38 hits Apply

Number of Elements (1)

1 37

38 hits Apply

Number of Terminals (1)

3 36

38 hits Apply

ENHANCEMENT MODE 38

38 hits Apply

150.0 °C 4

38 hits Apply

PLASTIC/EPOXY 36

38 hits Apply

RECTANGULAR 36

38 hits Apply

FLANGE MOUNT 36

38 hits Apply

Contact Manufacturer 2 Obsolete 34 Transferred 2

38 hits Apply

235 1

38 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 38

38 hits Apply

75 W 32

38 hits Apply

125 W 4

38 hits Apply

Surface Mount (1)

NO 37

38 hits Apply