Parametric results for: MTP8N50 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LEADFORM OPTIONS ARE AVAILABLE 3

42 hits Apply

510.0 mJ 4

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DRAIN 39

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Configuration (3)

SINGLE 32 Single 2 SINGLE WITH BUILT-IN DIODE 6

42 hits Apply

DS Breakdown Voltage-Min (1)

500 V 39

42 hits Apply

Drain Current-Max (Abs) (ID) (1)

8 A 2

42 hits Apply

Drain Current-Max (ID) (1)

8 A 39

42 hits Apply

Drain-source On Resistance-Max (1)

800 mΩ 39

42 hits Apply

METAL-OXIDE SEMICONDUCTOR 40

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150 pF 3

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TO-220AB 39

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R-PSFM-T3 39

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e0 7

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Manufacturer (6)

Freescale Semiconductor 2 Motorola Mobility LLC 18 Motorola Semiconductor Products 18 onsemi 1 Rochester Electronics LLC 1 Semiconductor Technology Inc 2

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NOT SPECIFIED 1

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Number of Elements (1)

1 39

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Number of Terminals (1)

3 39

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ENHANCEMENT MODE 40

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150.0 °C 7

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-55.0 °C 1

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PLASTIC/EPOXY 39

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RECTANGULAR 39

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FLANGE MOUNT 39

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Active 1 Contact Manufacturer 2 Obsolete 37 Transferred 2

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No 1

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235 1 NOT SPECIFIED 2

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Polarity/Channel Type (1)

N-CHANNEL 40

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125 W 35

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125 W 7

42 hits Apply

Surface Mount (1)

NO 40

42 hits Apply