Parametric results for: MTW10N40E under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 3

3 hits Apply

Configuration (2)

SINGLE 2 Single 1

3 hits Apply

DS Breakdown Voltage-Min (1)

400 V 3

3 hits Apply

Drain Current-Max (Abs) (ID) (1)

10 A 1

3 hits Apply

Drain Current-Max (ID) (1)

10 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

550 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-247 3

3 hits Apply

R-PSFM-T3 3

3 hits Apply

e0 3

3 hits Apply

Manufacturer (3)

Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Obsolete 3

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

150 W 3

3 hits Apply

150 W 3

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply