Parametric results for: MUN5216DW1T1G under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

BUILT-IN BIAS RESISTOR 1

4 hits Apply

Collector Current-Max (IC) (1)

100 mA 3

4 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 1

4 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR 1

4 hits Apply

DC Current Gain-Min (hFE) (1)

160.0 3

4 hits Apply

R-PDSO-G6 1

4 hits Apply

e3 2

4 hits Apply

Manufacturer (2)

LRC Leshan Radio Co Ltd 2 onsemi 2

4 hits Apply

1 2

4 hits Apply

Number of Elements (1)

2 3

4 hits Apply

Number of Terminals (1)

6 1

4 hits Apply

150.0 °C 1

4 hits Apply

PLASTIC/EPOXY 1

4 hits Apply

RECTANGULAR 1

4 hits Apply

SMALL OUTLINE 1

4 hits Apply

Active 4

4 hits Apply

Yes 4

4 hits Apply

260 2

4 hits Apply

Polarity/Channel Type (1)

NPN 3

4 hits Apply

256 mW 1 385 mW 2

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply