Parametric results for: MX0912B251Y,114 under RF Power Bipolar Transistors

All Filters Additional Feature Case Connection Collector-Emitter Voltage-Max Configuration Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

DIFFUSED EMITTER BALLASTING RESISTORS 1

1 hit Apply

BASE 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

20 V 1

1 hit Apply

Configuration (1)

SINGLE 1

1 hit Apply

Highest Frequency Band (1)

L BAND 1

1 hit Apply

R-CDFM-F2 1

1 hit Apply

Manufacturer (1)

NXP Semiconductors 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

2 1

1 hit Apply

200.0 °C 1

1 hit Apply

CERAMIC, METAL-SEALED COFIRED 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Obsolete 1

1 hit Apply

Polarity/Channel Type (1)

NPN 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply