Parametric results for: NDS352APL99Z under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

LOGIC LEVEL COMPATIBLE 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

2 hits Apply

Drain Current-Max (ID) (1)

900 mA 2

2 hits Apply

Drain-source On Resistance-Max (1)

300 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

TO-236AB 1

2 hits Apply

R-PDSO-G3 2

2 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 1 Texas Instruments 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Obsolete 2

2 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 2

2 hits Apply

460 mW 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply