Parametric results for: NE32484AS under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

LOW NOISE 3 LOW NOISE, HIGH RELIABILITY 2

5 hits Apply

Configuration (1)

SINGLE 5

5 hits Apply

DS Breakdown Voltage-Min (2)

3 V 1 4 V 4

Min (V) - Max (V)

5 hits Apply

Drain Current-Max (ID) (2)

20 mA 1 70 mA 2

Min (A) - Max (A)

5 hits Apply

HETERO-JUNCTION 5

5 hits Apply

Highest Frequency Band (2)

KU BAND 1 X BAND 4

5 hits Apply

O-CRDB-F4 4 O-CRMW-F4 1

5 hits Apply

Manufacturer (3)

California Eastern Laboratories (CEL) 2 NEC Electronics America Inc 2 NEC Electronics Group 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

4 5

5 hits Apply

DEPLETION MODE 5

5 hits Apply

150.0 °C 2

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 5

5 hits Apply

ROUND 5

5 hits Apply

DISK BUTTON 4 MICROWAVE 1

5 hits Apply

Obsolete 5

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

Power Gain-Min (Gp) (1)

10.0 dB 5

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply