Parametric results for: NE32500 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

HIGH RELIABILITY 6 LOW NOISE 2

9 hits Apply

Configuration (1)

SINGLE 8

9 hits Apply

DS Breakdown Voltage-Min (1)

4 V 9

9 hits Apply

Drain Current-Max (ID) (1)

90 mA 1

9 hits Apply

HETERO-JUNCTION 9

9 hits Apply

Highest Frequency Band (1)

KA BAND 9

9 hits Apply

R-XUUC-N4 1 S-XUUC-N4 8

9 hits Apply

e0 3

9 hits Apply

Manufacturer (4)

NEC Compound Semiconductor Devices Ltd 5 NEC Electronics America Inc 2 NEC Electronics Group 1 Renesas Electronics Corporation 1

9 hits Apply

1 2

9 hits Apply

Number of Elements (1)

1 8

9 hits Apply

Number of Terminals (1)

4 9

9 hits Apply

DEPLETION MODE 9

9 hits Apply

175.0 °C 1

9 hits Apply

UNSPECIFIED 9

9 hits Apply

RECTANGULAR 1 SQUARE 8

9 hits Apply

UNCASED CHIP 9

9 hits Apply

Obsolete 6 Transferred 3

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

200 mW 1

9 hits Apply

Power Gain-Min (Gp) (1)

11.0 dB 9

9 hits Apply

Surface Mount (1)

YES 9

9 hits Apply