Parametric results for: NE325S01 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

HIGH RELIABILITY 6 LOW NOISE 4 LOW NOISE, HIGH RELIABILITY 2

12 hits Apply

SOURCE 7

12 hits Apply

Configuration (1)

SINGLE 12

12 hits Apply

DS Breakdown Voltage-Min (2)

3 V 10 4 V 2

Min (V) - Max (V)

12 hits Apply

Drain Current-Max (ID) (1)

20 mA 10

12 hits Apply

HETERO-JUNCTION 12

12 hits Apply

Highest Frequency Band (1)

KU BAND 12

12 hits Apply

O-CRDB-G4 2 O-PRDB-G4 8 X-PXMW-G4 2

12 hits Apply

e0 1

12 hits Apply

Manufacturer (5)

California Eastern Laboratories (CEL) 3 NEC Compound Semiconductor Devices Ltd 3 NEC Electronics America Inc 3 NEC Electronics Group 2 Renesas Electronics Corporation 1

12 hits Apply

Number of Elements (1)

1 12

12 hits Apply

Number of Terminals (1)

4 12

12 hits Apply

DEPLETION MODE 12

12 hits Apply

CERAMIC, METAL-SEALED COFIRED 2 PLASTIC/EPOXY 10

12 hits Apply

ROUND 10 UNSPECIFIED 2

12 hits Apply

DISK BUTTON 10 MICROWAVE 2

12 hits Apply

Obsolete 9 Transferred 3

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

12 hits Apply

Power Gain-Min (Gp) (1)

11.0 dB 12

12 hits Apply

Surface Mount (1)

YES 12

12 hits Apply