Parametric results for: NE3509M14 under RF Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Configuration (1)

SINGLE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

3 V 1

1 hit Apply

Drain Current-Max (ID) (1)

20 mA 1

1 hit Apply

JUNCTION 1

1 hit Apply

Highest Frequency Band (1)

C BAND 1

1 hit Apply

R-PDSO-F4 1

1 hit Apply

Manufacturer (1)

Renesas Electronics Corporation 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

4 1

1 hit Apply

DEPLETION MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Active 1

1 hit Apply

Yes 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

150 mW 1

1 hit Apply

Power Gain-Min (Gp) (1)

16.5 dB 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply