Parametric results for: NE5500479A under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

SOURCE 11

11 hits Apply

Configuration (1)

SINGLE 11

11 hits Apply

DS Breakdown Voltage-Min (3)

6 V 4 8 V 4 20 V 3

Min (V) - Max (V)

11 hits Apply

Drain Current-Max (ID) (2)

700 mA 8 1 A 3

Min (A) - Max (A)

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 11

11 hits Apply

R-PQMW-F4 2 R-XQMW-F4 9

11 hits Apply

e0 5 e6 4

11 hits Apply

Manufacturer (3)

NEC Compound Semiconductor Devices Ltd 4 NEC Electronics Group 4 Renesas Electronics Corporation 3

11 hits Apply

1 2

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

4 11

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

125.0 °C 2

11 hits Apply

PLASTIC/EPOXY 2 UNSPECIFIED 9

11 hits Apply

RECTANGULAR 11

11 hits Apply

MICROWAVE 11

11 hits Apply

Obsolete 3 Transferred 8

11 hits Apply

No 1 Yes 2

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

1.6 W 1 10 W 1

Min (W) - Max (W)

11 hits Apply

Surface Mount (1)

YES 11

11 hits Apply