Parametric results for: NIF62514T3G under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

AVALANCHE RATED 1

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300.0 mJ 1

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DRAIN 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE AND RESISTOR 1

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DS Breakdown Voltage-Min (1)

42 V 1

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Drain Current-Max (ID) (1)

6 A 1

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Drain-source On Resistance-Max (1)

120 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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TO-261AA 1

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R-PDSO-G4 1

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e3 1

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Manufacturer (1)

Rochester Electronics LLC 1

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NOT SPECIFIED 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

4 1

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ENHANCEMENT MODE 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Active 1

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Yes 1

1 hit Apply

260 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

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Surface Mount (1)

YES 1

1 hit Apply