Parametric results for: NP34N055SLE under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

100.0 mJ 2

6 hits Apply

DRAIN 2

6 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 2

6 hits Apply

DS Breakdown Voltage-Min (1)

55 V 2

6 hits Apply

Drain Current-Max (ID) (1)

34 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

24 mΩ 2

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-252AA 2

6 hits Apply

R-PSSO-G2 2

6 hits Apply

e0 1

6 hits Apply

Manufacturer (2)

NEC Electronics America Inc 1 Renesas Electronics Corporation 5

6 hits Apply

1 1

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

2 2

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

175.0 °C 5

6 hits Apply

PLASTIC/EPOXY 2

6 hits Apply

RECTANGULAR 2

6 hits Apply

SMALL OUTLINE 2

6 hits Apply

Active 3 Obsolete 3

6 hits Apply

260 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

88 W 5

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply