Parametric results for: NP84N075 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

250.0 mJ 4 333.0 mJ 38

Min (mJ) - Max (mJ)

47 hits Apply

DRAIN 42

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Configuration (2)

SINGLE 5 SINGLE WITH BUILT-IN DIODE 42

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DS Breakdown Voltage-Min (1)

75 V 42

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Drain Current-Max (ID) (1)

84 A 47

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Drain-source On Resistance-Max (1)

12.5 mΩ 42

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METAL-OXIDE SEMICONDUCTOR 47

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TO-220AB 12 TO-262AA 12 TO-263AB 18

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R-PSFM-T3 12 R-PSIP-T3 12 R-PSSO-G2 18

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e0 12 e1 1 e3 18 e6 1

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Manufacturer (3)

NEC Electronics America Inc 10 NEC Electronics Group 17 Renesas Electronics Corporation 20

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Number of Elements (1)

1 47

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Number of Terminals (2)

2 18 3 24

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ENHANCEMENT MODE 47

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175.0 °C 20

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PLASTIC/EPOXY 42

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RECTANGULAR 42

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FLANGE MOUNT 12 IN-LINE 12 SMALL OUTLINE 18

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End Of Life 1 Obsolete 19 Transferred 27

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No 4 Yes 6

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260 3 NOT SPECIFIED 7

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Polarity/Channel Type (1)

N-CHANNEL 47

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200 W 20

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Surface Mount (2)

NO 25 YES 22

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