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NTB13N10T4
Rochester Electronics LLC
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Check for Price | No | No | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 13 A | 165 mΩ | 85 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 39 A | SWITCHING | SILICON | R-PSSO-G2 | e0 | COMMERCIAL | 1 | 235 | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | ROCHESTER ELECTRONICS LLC | CASE 418B-04, D2PAK-3 | 3 | CASE 418B-04 | unknown | |||||||
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NTB13N10T4G
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 13 A | 165 mΩ | 85 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 39 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | COMMERCIAL | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | ROCHESTER ELECTRONICS LLC | LEAD FREE, CASE 418B-04, D2PAK-3 | 3 | CASE 418B-04 | unknown | ||||||||
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NTB13N10T4G
onsemi
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 13 A | 165 mΩ | 85 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 64.7 W | 39 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 175 °C | 260 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | ON SEMICONDUCTOR | LEAD FREE, CASE 418B-04, D2PAK-3 | 3 | CASE 418B-04 | not_compliant | EAR99 | 8541.29.00.95 | onsemi | |||||
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NTB13N10T4
onsemi
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 13 A | 165 mΩ | 85 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 64.7 W | 39 A | SWITCHING | SILICON | R-PSSO-G2 | e0 | Not Qualified | 1 | 175 °C | 235 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | ON SEMICONDUCTOR | CASE 418B-04, D2PAK-3 | 3 | CASE 418B-04 | not_compliant | EAR99 | 8541.29.00.95 | onsemi |