Parametric results for: NTB52N10 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

800.0 mJ 6

6 hits Apply

DRAIN 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

100 V 6

6 hits Apply

Drain Current-Max (ID) (1)

52 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

30 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PSSO-G2 6

6 hits Apply

e0 3 e3 3

6 hits Apply

Manufacturer (2)

onsemi 4 Rochester Electronics LLC 2

6 hits Apply

1 4 NOT SPECIFIED 1

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

2 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Active 2 Obsolete 4

6 hits Apply

No 2 Yes 2

6 hits Apply

235 3 260 2 NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

178 W 4

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply