Parametric results for: NTD4860N under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

84.5 mJ 5

5 hits Apply

DRAIN 5

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

25 V 5

5 hits Apply

Drain Current-Max (ID) (1)

10.4 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

11.1 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PSIP-T3 3 R-PSSO-G2 2

5 hits Apply

e3 5

5 hits Apply

Manufacturer (2)

onsemi 3 Rochester Electronics LLC 2

5 hits Apply

1 3 NOT SPECIFIED 2

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (2)

2 2 3 3

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

175.0 °C 3

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

IN-LINE 3 SMALL OUTLINE 2

5 hits Apply

Active 2 End Of Life 1 Obsolete 2

5 hits Apply

Yes 5

5 hits Apply

260 1 NOT SPECIFIED 2

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

50 W 3

5 hits Apply

Surface Mount (2)

NO 3 YES 2

5 hits Apply