Parametric results for: NTD78N03-1 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

722.5 mJ 3

3 hits Apply

DRAIN 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

25 V 3

3 hits Apply

Drain Current-Max (ID) (1)

11.4 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

6 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PSIP-T3 3

3 hits Apply

e0 1 e3 2

3 hits Apply

Manufacturer (2)

onsemi 2 Rochester Electronics LLC 1

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 1

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

IN-LINE 3

3 hits Apply

Active 1 Obsolete 2

3 hits Apply

Yes 2

3 hits Apply

260 1 NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply