Parametric results for: NTHD4502N under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 4

4 hits Apply

Drain Current-Max (ID) (1)

2.2 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

85 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

25 pF 4

4 hits Apply

R-PDSO-F8 1 R-XDSO-C8 3

4 hits Apply

e0 2 e3 2

4 hits Apply

Manufacturer (2)

onsemi 2 Rochester Electronics LLC 2

4 hits Apply

1 2 NOT SPECIFIED 2

4 hits Apply

Number of Elements (1)

2 4

4 hits Apply

Number of Terminals (1)

8 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 2

4 hits Apply

-55.0 °C 1

4 hits Apply

UNSPECIFIED 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 2 End Of Life 1 Obsolete 1

4 hits Apply

No 1 Yes 2

4 hits Apply

235 1 240 1 260 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

1.13 W 2

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply