Parametric results for: NVD5890N under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

240.0 mJ 2 320.0 mJ 1

Min (mJ) - Max (mJ)

3 hits Apply

DRAIN 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

40 V 3

3 hits Apply

Drain Current-Max (ID) (1)

123 A 3

3 hits Apply

Drain-source On Resistance-Max (2)

3.7 mΩ 2 5.5 mΩ 1

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

490 pF 2

3 hits Apply

R-PSSO-G2 3

3 hits Apply

e3 3

3 hits Apply

Manufacturer (1)

onsemi 3

3 hits Apply

1 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 3

3 hits Apply

-55.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

End Of Life 2 Obsolete 1

3 hits Apply

Yes 3

3 hits Apply

260 1 NOT SPECIFIED 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

107 W 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply