Parametric results for: NVMFS5113PLT1G under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

315.0 mJ 1

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DRAIN 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

60 V 1

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Drain-source On Resistance-Max (1)

14 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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R-PDSO-F5 1

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e3 1

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Manufacturer (1)

onsemi 1

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1 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

5 1

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ENHANCEMENT MODE 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Active 1

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Yes 1

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260 1

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Polarity/Channel Type (1)

P-CHANNEL 1

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Surface Mount (1)

YES 1

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