Parametric results for: PHB55N03T under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ESD PROTECTED 3

5 hits Apply

80.0 mJ 3

5 hits Apply

DRAIN 3

5 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 3

5 hits Apply

DS Breakdown Voltage-Min (1)

30 V 3

5 hits Apply

Drain Current-Max (ID) (1)

55 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

18 mΩ 3

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PSSO-G2 3

5 hits Apply

e0 2

5 hits Apply

Manufacturer (2)

NXP Semiconductors 3 Philips Semiconductors 2

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

2 3

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

175.0 °C 3

5 hits Apply

PLASTIC/EPOXY 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

SMALL OUTLINE 3

5 hits Apply

Obsolete 3 Transferred 2

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

103 W 3

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply