Parametric results for: PHP1N60 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1

4 hits Apply

45.0 mJ 1 120.0 mJ 1

Min (mJ) - Max (mJ)

4 hits Apply

DRAIN 2

4 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

600 V 2

4 hits Apply

Drain Current-Max (ID) (1)

1.9 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

6 Ω 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

10 pF 1

4 hits Apply

TO-220AB 2

4 hits Apply

R-PSFM-T3 2

4 hits Apply

e0 2

4 hits Apply

Manufacturer (2)

NXP Semiconductors 2 Philips Semiconductors 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 2

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

FLANGE MOUNT 2

4 hits Apply

Obsolete 2 Transferred 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

50 W 1

4 hits Apply

50 W 3

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply