Parametric results for: PHX4N60 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

FAST SWITCHING 2

5 hits Apply

290.0 mJ 1 295.0 mJ 1 500.0 mJ 1

Min (mJ) - Max (mJ)

5 hits Apply

ISOLATED 3

5 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 3

5 hits Apply

DS Breakdown Voltage-Min (1)

600 V 3

5 hits Apply

Drain Current-Max (ID) (3)

2.4 A 2 3.2 A 1 3.6 A 2

Min (A) - Max (A)

5 hits Apply

Drain-source On Resistance-Max (2)

1.2 Ω 1 2.5 Ω 2

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

120 pF 1

5 hits Apply

TO-220AB 2

5 hits Apply

R-PSFM-T3 3

5 hits Apply

e0 2

5 hits Apply

Manufacturer (2)

NXP Semiconductors 3 Philips Semiconductors 2

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 3

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 4

5 hits Apply

PLASTIC/EPOXY 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

FLANGE MOUNT 3

5 hits Apply

Obsolete 3 Transferred 2

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

35 W 1

5 hits Apply

30 W 1 35 W 1 37 W 1

Min (W) - Max (W)

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply