Parametric results for: PMPB10XNE under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 6

8 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 6

8 hits Apply

DS Breakdown Voltage-Min (1)

20 V 6

8 hits Apply

Drain Current-Max (ID) (2)

9 A 6 12.9 A 1

Min (A) - Max (A)

8 hits Apply

Drain-source On Resistance-Max (1)

14 mΩ 6

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

8 hits Apply

S-PDSO-N6 6

8 hits Apply

e3 7

8 hits Apply

Manufacturer (2)

Nexperia 5 NXP Semiconductors 3

8 hits Apply

1 7

8 hits Apply

Number of Elements (1)

1 7

8 hits Apply

Number of Terminals (1)

6 6

8 hits Apply

ENHANCEMENT MODE 7

8 hits Apply

150.0 °C 1

8 hits Apply

PLASTIC/EPOXY 6

8 hits Apply

SQUARE 6

8 hits Apply

SMALL OUTLINE 6

8 hits Apply

Active 5 Transferred 3

8 hits Apply

260 6

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 7

8 hits Apply

12.5 W 1

8 hits Apply

Surface Mount (1)

YES 7

8 hits Apply