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PMV16UN
NXP Semiconductors
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 5.8 A | 18 mΩ | LOW THRESHOLD | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | NXP SEMICONDUCTORS | SOT-23 | SMALL OUTLINE, R-PDSO-G3 | 3 | unknown | EAR99 | ||||||||||
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PMV16UN,215
NXP Semiconductors
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 5.8 A | 18 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 4.17 W | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | IEC-60134 | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | NXP SEMICONDUCTORS | TO-236 | PLASTIC PACKAGE-3 | 3 | unknown | EAR99 | SOT23 | ||||||
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PMV16UN,215
Nexperia
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 5.8 A | 18 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | IEC-60134 | 1 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | NEXPERIA | TO-236 | PLASTIC PACKAGE-3 | 3 | compliant | EAR99 | SOT23 | 2017-02-01 | Nexperia | ||||||
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PMV16UN
Nexperia
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 5.8 A | 18 mΩ | LOW THRESHOLD | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | NEXPERIA | SMALL OUTLINE, R-PDSO-G3 | compliant | EAR99 | 2017-02-01 | Nexperia |