Parametric results for: PMZ290UN under Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

10 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 4

10 hits Apply

DS Breakdown Voltage-Min (1)

20 V 4

10 hits Apply

Drain Current-Max (ID) (2)

1 A 2 1.2 A 3

Min (A) - Max (A)

10 hits Apply

Drain-source On Resistance-Max (2)

320 mΩ 3 380 mΩ 1

Min (Ω) - Max (Ω)

10 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

10 hits Apply

R-PBCC-N3 4

10 hits Apply

e3 3

10 hits Apply

Manufacturer (2)

Nexperia 6 NXP Semiconductors 4

10 hits Apply

1 3

10 hits Apply

Number of Elements (1)

1 5

10 hits Apply

Number of Terminals (1)

3 4

10 hits Apply

ENHANCEMENT MODE 5

10 hits Apply

150.0 °C 1

10 hits Apply

PLASTIC/EPOXY 4

10 hits Apply

RECTANGULAR 4

10 hits Apply

CHIP CARRIER 4

10 hits Apply

Active 2 Obsolete 5 Transferred 3

10 hits Apply

260 3

10 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

10 hits Apply

2.7 W 1

10 hits Apply

Surface Mount (1)

YES 5

10 hits Apply