Parametric results for: PSMN012-100YS under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

170.0 mJ 3

4 hits Apply

DRAIN 3

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

100 V 3

4 hits Apply

Drain Current-Max (ID) (1)

60 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

12 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

MO-235 3

4 hits Apply

R-PSSO-G4 3

4 hits Apply

e3 4

4 hits Apply

Manufacturer (2)

Nexperia 2 NXP Semiconductors 2

4 hits Apply

1 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

4 3

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

175.0 °C 2

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Active 2 Transferred 2

4 hits Apply

Yes 1

4 hits Apply

260 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

130 W 2

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply