Parametric results for: PTB20031R1 under RF Power Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 3

4 hits Apply

EMITTER 3

4 hits Apply

Collector Current-Max (IC) (3)

6 A 1 6.7 A 2 10 A 1

Min (A) - Max (A)

4 hits Apply

Collector-Emitter Voltage-Max (1)

25 V 3

4 hits Apply

Configuration (1)

SINGLE 2

4 hits Apply

DC Current Gain-Min (hFE) (1)

20.0 4

4 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 4

4 hits Apply

R-CDFM-F6 4

4 hits Apply

Manufacturer (2)

Advanced Semiconductor Inc 1 Ericsson 3

4 hits Apply

Number of Elements (1)

1 2

4 hits Apply

Number of Terminals (1)

6 4

4 hits Apply

150.0 °C 1

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Active 1 Obsolete 3

4 hits Apply

Polarity/Channel Type (1)

NPN 4

4 hits Apply

65 W 1

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply