Parametric results for: PTF10135 under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 2

2 hits Apply

SOURCE 2

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

65 V 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

Highest Frequency Band (1)

L BAND 2

2 hits Apply

R-CDFP-F2 2

2 hits Apply

e0 1 e3 1

2 hits Apply

Manufacturer (2)

Ericsson 1 Infineon Technologies AG 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

200.0 °C 2

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLATPACK 2

2 hits Apply

Transferred 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

39 W 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply